Stanford Campus

Description

In modern VLSI technologies, device electrical characteristics are sensitive to structural details and therefore to fabrication techniques. This course addresses the following questions: How are advanced VLSI devices designed and what future changes are likely? What are the implications for device electrical performance caused by fabrication techniques?

Please Note: for winter 2022, the recording quality of the class may be of lower quality than is typical for SCPD classes. The faculty member is experimenting with self-recording his lectures in the classroom

Prerequisites

EE212 and EE216, or equivalent.

 

Topics include

  • Physical models for nanometer scale structures.
  • Control of electrical characteristics (threshold voltage, short channel effects, ballistic transport) in small structures.
  • Alternative device structures for VLSI.